 |
|
|
SiC power semiconductor devices are able to withstand
higher voltage and higher temperature than conventional silicon devices,
and the energy loss of the devices is much lower.
These superior characteristics indicate promising future to apply them to electric power systems.
Thus, The Kansai Electric Power Company, Inc.
(KEPCO) has been making extensive research to develop SiC power semiconductor devices and inverters.
1. Impact of SiC power semiconductor devices to electric power conversion equipment
SiC has many superior characteristics to Si (Silicon) as the semiconductor material.
So, as shown in the figure below, SiC semiconductor devices are expected to achieve much higher performance
than Si semiconductor devices especially in high voltage and large capacity application.
2. Development of SiC devices and modules
KEPCO has developed the high voltage and low loss SiC diode and the originally designed
switching device called SICGT (SiC Commutated Gate-turnoff Thyristor)
which is suitable for high voltage, large capacity application.
KEPCO has also developed new insulation resign (Nano-tech resin KA-100)
which is soft rubber-like material and able to withstand up to 400 .
These developments enable us to realize 4.5kV-100A switching module usable up to 300.
In addition to that, KEPCO has developed large current flat package module.
Then, 5kV-200A and 3kV-600A SiC diode modules have been realized.
 |
 |
SiC Switching module (4.5kV,100A,usable up to 300)
|
3kV,600A,SiC Diode module
|
3. Development of SiC Inverter
Using SiC switching module we have developed so far, 110kVA three-phase SiC inverter has been developed.
This is the largest capacity SiC inverter ever reported in the world.
KEPCO continues to research on SiC inverter to realize practically applicable system.
We expect that SiC inverter will be applied to various industrial motor control systems as well as to AC-DC conversion systems connected to electric power systems.
Loss of SiC inverters are estimated about half compared to conventional Si inverters.
We can realize considerable energy saving by the development of SiC inverters.
| 3-phase Inverter Capacity : 110kVA |
| Peak current |
: 98A |
| DC Voltage |
: 1900V |
| PWM frequency |
: 2kHz |
|
SiC 3-phase Inverter |
inverter stack (Single Phase) |
|
 |
